Physics

  2010 MAR 23 - (VerticalNews.com) -- "We image the domain patterns in perpendicularly magnetized ultrathin Fe films on Cu(100) as a function of the temperature T and the applied magnetic field H. Between the low-field stripe phase and the high-field uniform phase we find a bubble phase, consisting of reversed circular domains in a homogeneous background," investigators in Zurich, Switzerland report.

  "The curvature of the transition lines in the H - T parameter space is in contrast to the general expectations," wrote N. Saratz and colleagues ...read more

  2010 MAR 23 - (VerticalNews.com) -- According to recent research from Changchun, People's Republic of China, "Using first-principles density functional theory, we have investigated the electronic and field emission properties of carbon nanocones (CNCs) doped with N or B with 60 degrees disclination. Our findings are that the emission properties for the doped CNCs depend on the doping species, position, and concentration."

  "Compared to pristine CNC, N-doped CNCs exhibit better field emission properties, in which as the doping concentration increases from 1.25% to 2.5% the maximum emission current at applied electric field of 0.3 V/angstrom increases from 0.94 mu A (one N atom is doped at the position adjacent to the pentagon) to 2.90 mu A (two N atoms are doped at pentagon). As for pristine CNC the emission current is only 0.21 mu A. However, B-doping has no significant influence on the emission properties of CNCs," wrote C.Q. Qu and colleagues, Jilin University ...read more

  2010 MAR 23 - (VerticalNews.com) -- According to recent research published in the Journal of the Korean Physical Society, "As DRAM cell pitch size decreases, the need for a high performance transistor is increasing. Though saddle-fin (S-fin) transistors have superior characteristics, S-fin transistors are well known to be more sensitive to process variation."

  "To make uniform S-fin transistors, for the first time, we developed a new fin formation method using tilted ion implantation along the wordline direction after a recess gate etch. Due to the increased etch rate of the oxide film by ion implantation damage, fins are made at the bottom channel of the recess gate after wet etching. The resulting tilt implanted saddle-fin (TIS-fin) transistor has remarkably improved characteristics, such as similar to 8% subthreshold swing (SS) and a 40% drain induced barrier lowering (DIBL) decrease," wrote M.S. Yoo and colleagues ...read more