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Solid State Physics - Studies from A.Z. Khachatrian and co-researchers yield new data on solid state physics

  2010 AUG 31 - (VerticalNews.com) -- "A consistent approach to the description of a stationary motion of a quantum particle in an arbitrary one-dimensional potential has been developed," investigators in Yerevan, Armenia report.

  "It has been proved that the wave function of an infinite motion can be expressed accurate to up two arbitrary constants with the use of one particular solution to the system of first-order linear differential equations. It has been shown that many well-known methods, such as the integral equation method, the transfer matrix method, the embedding method, and the method of combination of scattering parameters, are based on a general property of the solutions to the Schrodinger equation," wrote A.Z. Khachatrian and colleagues ...read more


Solid State Physics - New findings from Russian Academy of Science in the area of solid state physics published

  2010 AUG 31 - (VerticalNews.com) -- "The relaxation of longitudinal phonons and absorption of ultrasound in cubic crystals with positive (Ge, Si, InSb, MgO) and negative (KCl) anisotropies of the second-order elastic moduli have been investigated. The scattering processes occurring with the participation of three longitudinal phonons (the LLL mechanism) and the processes of scattering of a longitudinal phonon by two transverse thermal phonons (the LTT mechanism) have been considered in terms of the anisotropic-continuum model," scientists writing in the journal Physics of the Solid State report ...read more


Solid State Physics - Researchers from Russian Academy of Science discuss findings in solid state physics

  2010 AUG 31 - (VerticalNews.com) -- "Manganite film electrodes were integrated with a spacer layer of strontium titanate to produce an epitaxial La0.67Ca0.33MnO3/(1000 nm)SrTiO3/La0.67Ca0.33MnO3 (LCMO/STO/LCMO) heterostructure by laser ablation," scientists in Russia report.

  "At T = 300 K, the mechanical stresses in the STO layer relaxed to a considerable extent, while the LCMO electrodes were found to be under biaxial lateral tensile strain, with the lattice unit cell of the top electrode distorted considerably stronger (a (ayen)/a (aSyen) a parts per thousand 1.026) than that of the bottom electrode (a parts per thousand 1.008) (a (ayen) and a (aSyen) are the unit cell parameters in the substrate plane and along the normal to its surface, respectively). The reciprocal of the capacitance C of the plane-parallel LCMO/STO/LCMO film capacitors thus formed increased almost linearly with increasing temperature T in the range 50-250 K. At T< 100 K, the capacitance C decreased by approximately 50% in an electric field E = 40 kV/cm," wrote Y.A. Boikov and colleagues, Russian Academy of Science ...read more


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